Indiziert in
- Öffnen Sie das J-Tor
- Genamics JournalSeek
- Akademische Schlüssel
- JournalTOCs
- Forschungsbibel
- Nationale Wissensinfrastruktur Chinas (CNKI)
- Scimago
- Ulrichs Zeitschriftenverzeichnis
- Elektronische Zeitschriftenbibliothek
- RefSeek
- Hamdard-Universität
- EBSCO AZ
- OCLC – WorldCat
- SWB Online-Katalog
- Virtuelle Bibliothek für Biologie (vifabio)
- Publons
- MIAR
- Wissenschaftliche Indexierungsdienste (SIS)
- Euro-Pub
- Google Scholar
Nützliche Links
Teile diese Seite
Zeitschriftenflyer
Open-Access-Zeitschriften
- Allgemeine Wissenschaft
- Biochemie
- Bioinformatik und Systembiologie
- Chemie
- Genetik und Molekularbiologie
- Immunologie und Mikrobiologie
- Klinische Wissenschaften
- Krankenpflege und Gesundheitsfürsorge
- Landwirtschaft und Aquakultur
- Lebensmittel & Ernährung
- Maschinenbau
- Materialwissenschaften
- Medizinische Wissenschaften
- Neurowissenschaften und Psychologie
- Pharmazeutische Wissenschaften
- Umweltwissenschaften
- Veterinärwissenschaften
- Wirtschaft & Management
Abstrakt
Study on the Effect of Plasma Treatment on Flat-band-voltage and Equivalent Oxide Thickness using Metal-organic Chemical Vapor Deposition TiN Film as p-MOSFETS Metal Gate Electrode
Jianfeng Gao, Hong Yang, Guobin Bai, Junfeng Li and Chao Zhao
This work aimed to study on the effects of plasma treatment on flat band voltage (Vfb) and equivalent oxide thickness (EOT) using Metal-organic Chemical Vapor Deposition (MOCVD) TiN film as p-MOSFETs metal gate electrode. Theplasma treatment conditions effect on the resistance and composition properties of MOCVD TiN, consequently, they can modulate work function and control threshold voltage. The effects of “plasma treatment” were imposed to favor the formation of Ti-N bonds, thus decreasing the rate Ti-C bond and favoring a crystallized stoichiometric TiN phase to increase PMOS Vfb shift. Meanwhile, plasma treatments accelerate interfacial oxide formation and increase EOT. On the other hand, EOT increases with the increase of plasma treatment time and power in this work, but Vfb does not always increase and reach a max value.